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arXiv · 0902.1814

Structural modifications induced in hydrogenated amorphous Si/Ge multilayers by heat treatments

C. Frigeri·M. Serenyi·A. Csik·Z. Erdelyi·D. L. Beke·L. Nasi
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Abstract

A study is presented of the structural changes occurring as a function of the annealing conditions in hydrogenated amorphous Si/Ge multilayers prepared by sputtering. Annealing changes the structure of the as-deposited multilayer except for the less severe conditions here applied (150 oC, time<22 h). For higher temperatures and/or times, the modifications consist of layer intermixing and surface degradation in the shape of bumps and craters. They are argued to be due to the formation of H bubbles upon heating. Hydrogen should be mostly released from the amorphous Ge layers.

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C. Frigeri, M. Serenyi, A. Csik, Z. Erdelyi, D. L. Beke, L. Nasi. 2009-02-11. Structural modifications induced in hydrogenated amorphous Si/Ge multilayers by heat treatments. https://arxiv.org/abs/0902.1814

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