Spin-Hall effect and spin-Coulomb drag in doped semiconductors

E. M. Hankiewicz; G. Vignale

doi:10.1088/0953-8984/21/25/253202

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arXiv · 0902.2799

Spin-Hall effect and spin-Coulomb drag in doped semiconductors

E. M. Hankiewicz·G. Vignale

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Abstract

In this review, we describe in detail two important spin-transport phenomena: the extrinsic spin-Hall effect (coming from spin-orbit interactions between electrons and impurities) and the spin-Coulomb drag. The interplay of these two phenomena is analyzed. In particular, we discuss the influence of scattering between electrons with opposite spins on the spin current and the spin accumulation produced by the spin-Hall effect. Future challenges and open questions are briefly discussed.

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E. M. Hankiewicz, G. Vignale. 2009-02-16. Spin-Hall effect and spin-Coulomb drag in doped semiconductors. https://doi.org/10.1088/0953-8984%2F21%2F25%2F253202

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