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arXiv · 0903.1266

Formation of Epitaxial MnBi Layers on (Ga,Mn)As

J. Adell·M. Adell·I. Ulfat·L. Ilver·J. Sadowski·J. Kanski
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Abstract

The initial growth of MnBi on MnAs terminated (GaMn)As is studied by means of synchrotron based photoelectron spectroscopy. From analysis of surface core level shifts we conclude that a continued epitaxial MnBi layer is formed, in which the MnAs/MnBi interface occurs between As and Bi atomic planes. The well defined 1x2 surface reconstruction of the MnAs surface in preserved for up to 2 ML of MnBi before clear surface degradation occurs.

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J. Adell, M. Adell, I. Ulfat, L. Ilver, J. Sadowski, J. Kanski. 2009-03-06. Formation of Epitaxial MnBi Layers on (Ga,Mn)As. https://doi.org/10.1103/physrevb.80.075204

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