Tuning the electrical resistivity of semiconductor thin films by nanoscale corrugation

Shota Ono; Hiroyuki Shima

doi:10.1103/physrevb.79.235407

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arXiv · 0903.4271

Tuning the electrical resistivity of semiconductor thin films by nanoscale corrugation

Shota Ono·Hiroyuki Shima

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Abstract

The low-temperature electrical resistivity of corrugated semiconductor films is theoretically considered. Nanoscale corrugation enhances the electron-electron scattering contribution to the resistivity, resulting in a stepwise resistivity development with increasing corrugation amplitude. The enhanced electron scattering is attributed to the curvature-induced potential energy that affects the motion of electrons confined to a thin curved film. Geometric conditions and microscopic mechanism of the stepwise resistivity are discussed in detail.

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Shota Ono, Hiroyuki Shima. 2009-03-25. Tuning the electrical resistivity of semiconductor thin films by nanoscale corrugation. https://doi.org/10.1103/physrevb.79.235407

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