arXiv · 0904.1676
Anti-localization of graphene under substrate electric field
Abstract
A simple criterion is provided how the (anti-)localization properties of graphene are determined in the presence of inter-valley scattering, Kane-Mele topological mass term, and Rashba spin-orbit interaction (SOI). A set of (pseudo) time-reversal operations show that the number of effective internal degrees of freedom, such as spin and pseudo-spins distinguishing the sublattice and the valley, is the crucial parameter for localization. It is predicted that perpendicular electric field due to gate voltage of the substrate drives the system to anti-localization by enhancing the Rashba SOI.
Explore related subjects
Keep this discovery
Ken-Ichiro Imura, Yoshio Kuramoto, Kentaro Nomura. 2009-04-10. Anti-localization of graphene under substrate electric field. https://doi.org/10.1209/0295-5075%2F89%2F17009
Cite the original work for its findings. Save a collection to share your selection of sources.