One-dimensional Weak Localization of Electrons in a Single InAs Nanowire

Dong Liang; Mohammed R. Sakr; Xuan P. A. Gao

doi:10.1021/nl900424k

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arXiv · 0904.2338

One-dimensional Weak Localization of Electrons in a Single InAs Nanowire

Dong Liang·Mohammed R. Sakr·Xuan P. A. Gao

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Abstract

We report on low temperature (2-30K) electron transport and magneto-transport measurements of a chemically synthesized InAs nanowire. Both the temperature, T, and transverse magnetic field dependences of the nanowire conductance are consistent with the functional forms predicted in one-dimensional (1D) weak localization theory. By fitting the magneto-conductance data to theory, the phase coherence length of electrons is determined to be tens of nanometers with a T-1/3 dependence. Moreover, as the electron density is increased by a gate voltage, the magneto-conductance shows a possible signature of suppression of weak localization in multiple 1D subbands.

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Dong Liang, Mohammed R. Sakr, Xuan P. A. Gao. 2009-04-15. One-dimensional Weak Localization of Electrons in a Single InAs Nanowire. https://doi.org/10.1021/nl900424k

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