arXiv · 0905.2426
Characterization of the Torsional Piezoelectric-like Response of Tantalum Trisulfide Associated with Charge-Density-Wave Depinning
Abstract
We have studied the frequency and voltage dependence of voltage-induced torsional strains in orthorhombic TaS3 [V. Ya. Pokrovskii, et al, Phys. Rev. Lett. 98, 206404 (2007)] by measuring the modulation of the resonant frequency of an RF cavity containing the sample. The strain has an onset voltage below the charge-density-wave (CDW) threshold voltages associated with changes in shear compliance and resistance, suggesting that the strain is associated with polarization of the CDW rather than CDW current. Measurements with square-wave voltages show that the strain is very sluggish, not even reaching its dc value at a frequency of 0.1 Hz, but the dynamics appear to be very sample dependent. By applying oscillating torque while biasing the sample with a dc current, we have also looked for strain induced voltage in the sample; none is observed at the low biases where the voltage-induced strains first occur, but an induced voltage is observed at higher biases, probably associated with strain-dependent CDW conductance.
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J. Nichols, D. Dominko, L. Ladino, J. Zhou, J. W. Brill. 2009-06-17. Characterization of the Torsional Piezoelectric-like Response of Tantalum Trisulfide Associated with Charge-Density-Wave Depinning. https://doi.org/10.1103/physrevb.79.241110
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