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arXiv · 0905.3103

Graphene under hydrostatic pressure

John E. Proctor·Eugene Gregoryanz·Konstantin S. Novoselov·Mustafa Lotya·Jonathan N. Coleman·Matthew P. Halsall
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Abstract

In-situ high pressure Raman spectroscopy is used to study monolayer, bilayer and few-layer graphene samples supported on silicon in a diamond anvil cell to 3.5 GPa. The results show that monolayer graphene adheres to the silicon substrate under compressive stress. A clear trend in this behaviour as a function of graphene sample thickness is observed. We also study unsupported graphene samples in a diamond anvil cell to 8 GPa, and show that the properties of graphene under compression are intrinsically similar to graphite. Our results demonstrate the differing effects of uniaxial and biaxial strain on the electronic bandstructure.

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John E. Proctor, Eugene Gregoryanz, Konstantin S. Novoselov, Mustafa Lotya, Jonathan N. Coleman, Matthew P. Halsall. 2009-08-03. Graphene under hydrostatic pressure. https://doi.org/10.1103/physrevb.80.073408

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