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arXiv · 0906.0924

Resistivity of Graphene Nanoribbon Interconnects

Raghunath Murali·Kevin Brenner·Yinxiao Yang·Thomas Beck·James D. Meindl
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Abstract

Graphene nanoribbon interconnects are fabricated, and the extracted resistivity is compared to that of Cu. It is found that the average resistivity at a given line-width (18nm<W<52nm) is about 3X that of a Cu wire, whereas the best GNR has a resistivity comparable to that of Cu. The conductivity is found to be limited by impurity scattering as well as LER scattering; as a result, the best reported GNR resistivity is 3X the limit imposed by substrate phonon scattering. This study reveals that even moderate-quality graphene nanowires have the potential to outperform Cu for use as on-chip interconnects.

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Raghunath Murali, Kevin Brenner, Yinxiao Yang, Thomas Beck, James D. Meindl. 2009-06-04. Resistivity of Graphene Nanoribbon Interconnects. https://doi.org/10.1109/led.2009.2020182

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