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arXiv · 0906.2552

Chemically-induced Mobility Gaps in Graphene Nanoribbons: A Route for Upscaling Device Performances

Blanca Biel·François Triozon·X. Blase·Stephan Roche
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Abstract

We report a first-principles based study of mesoscopic quantum transport in chemically doped graphene nanoribbons with a width up to 10 nm. The occurrence of quasibound states related to boron impurities results in mobility gaps as large as 1 eV, driven by strong electron-hole asymmetrical backscattering phenomena. This phenomenon opens new ways to overcome current limitations of graphene-based devices through the fabrication of chemically-doped graphene nanoribbons with sizes within the reach of conventional lithography.

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Blanca Biel, François Triozon, X. Blase, Stephan Roche. 2009-06-14. Chemically-induced Mobility Gaps in Graphene Nanoribbons: A Route for Upscaling Device Performances. https://doi.org/10.1021/nl901226s

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