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arXiv · 0906.2894

Electrical resistivity ofYb(Rh1-xCox)2Si2 single crystals at low temperatures

S. Friedemann·N. Oeschler·C. Krellner·C. Geibel·F. Steglich
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Abstract

We report low-temperature measurements of the electrical resistivity of Yb(Rh1-xCox)2Si2 single crystals with 0 <= x <= 0.12. The isoelectronic substitution of Co on the Rh site leads to a decrease of the unit cell volume which stabilizes the antiferromagnetism. Consequently, the antiferromagnetic transition temperature increases upon Co substitution. For x = 0.07 Co content a subsequent low-temperature transition is observed in agreement with susceptibility measurements and results on YbRh2Si2 under hydrostatic pressure. Above the Neel transition the resistivity follows a non-Fermi liquid behavior similar to that of YbRh2Si2.

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S. Friedemann, N. Oeschler, C. Krellner, C. Geibel, F. Steglich. 2009-06-16. Electrical resistivity ofYb(Rh1-xCox)2Si2 single crystals at low temperatures. https://doi.org/10.1016/j.physb.2009.07.041

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