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arXiv · 0906.3310

Carbon nanotubes on partially depassivated n-doped Si(100)-(2x1):H substrates

Salvador Barraza-Lopez·Peter M. Albrecht·Joseph W. Lyding
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Abstract

We present a study on the mechanical configuration and the electronic properties of semiconducting carbon nanotubes supported by partially depassivated silicon substrates, as inferred from topographic and spectroscopic data acquired with a room-temperature ultrahigh vacuum scanning tunneling microscope and density-functional theory calculations. A mechanical distortion and doping for semiconducting carbon nanotubes on Si(100)-(2x1):H with hydrogen-depassivated stripes up to 100 Angstrom wide are ascertained from both experiment and theory. The results presented here point towards novel and local functionalities of nanotube-semiconductor interfaces.

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Salvador Barraza-Lopez, Peter M. Albrecht, Joseph W. Lyding. 2009-06-17. Carbon nanotubes on partially depassivated n-doped Si(100)-(2x1):H substrates. https://doi.org/10.1103/physrevb.80.045415

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