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arXiv · 0906.5597

Information Processing with Pure Spin Currents in Silicon: Spin Injection, Extraction, Manipulation and Detection

Olaf M. J. van "t Erve·Chaffra Awo-Affouda·Aubrey T. Hanbicki·Connie H. Li·Phillip E. Thompson·Berend T. Jonker
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Abstract

We demonstrate that information can be transmitted and processed with pure spin currents in silicon. Fe/Al2O3 tunnel barrier contacts are used to produce significant electron spin polarization in the silicon, generating a spin current which flows outside of the charge current path. The spin orientation of this pure spin current is controlled in one of three ways: (a) by switching the magnetization of the Fe contact, (b) by changing the polarity of the bias on the Fe/Al2O3 (injector) contact, which enables the generation of either majority or minority spin populations in the Si, providing a way to electrically manipulate the injected spin orientation without changing the magnetization of the contact itself, and (c) by inducing spin precession through application of a small perpendicular magnetic field. Spin polarization by electrical extraction is as effective as that achieved by the more common electrical spin injection. The output characteristics of a planar silicon three terminal device are very similar to those of non-volatile giant magnetoresistance metal spin-valve structures

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Olaf M. J. van "t Erve, Chaffra Awo-Affouda, Aubrey T. Hanbicki, Connie H. Li, Phillip E. Thompson, Berend T. Jonker. 2009-06-30. Information Processing with Pure Spin Currents in Silicon: Spin Injection, Extraction, Manipulation and Detection. https://arxiv.org/abs/0906.5597

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