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arXiv · 0907.1261

Multi-Band Mobility in Semiconducting Carbon Nanotubes

Y. Zhao·A. Liao·E. Pop
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Abstract

We present new data and a compact mobility model for single-wall carbon nanotubes, with only two adjustable parameters, the elastic and inelastic collision mean free paths at 300 K. The mobility increases with diameter, decreases with temperature, and has a more complex dependence on charge density. The model and data suggest the room temperature mobility does not exceed 10,000 cm2/V.s at high carrier density (n > 0.5 nm-1) for typical single-wall nanotube diameters, due to the strong scattering effect of the second subband.

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Y. Zhao, A. Liao, E. Pop. 2009-07-07. Multi-Band Mobility in Semiconducting Carbon Nanotubes. https://doi.org/10.1109/led.2009.2027615

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