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arXiv · 0907.1606

Step-edge instability during epitaxial growth of graphene from SiC(0001)

Valery Borovikov·Andrew Zangwill
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Abstract

The unique electronic properties of graphene offer the possibility that it could replace silicon when microelectronics evolves to nanoelectronics. Graphene grown epitaxially on silicon carbide is particularly attractive in this regard because SiC is itself a useful semiconductor and, by suitable manipulation of the growth conditions, epitaxial films can be produced that exhibit all the transport properties of ideal, two-dimensional graphene desired for device applications. Nevertheless, there is little or no understanding of the actual kinetics of growth, which is likely to be required for future process control. As a step in this direction, we propose a local heat release mechanism to explain finger-like structures observed when graphene is grown by step flow decomposition of SiC(0001). Using a continuum equation of motion for the shape evolution of a moving step, a linear stability analysis predicts whether a shape perturbation of a straight moving step grows or decays as a function of growth temperature, the background pressure of Si maintained during growth, and the effectiveness of an inert buffer gas to retard the escape of Si atoms from the crystal surface. The theory gives semi-quantitative agreement with experiment for the characteristic separation between fingers observed when graphene is grown in a low-pressure induction furnace or under ultrahigh vacuum conditions.

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Valery Borovikov, Andrew Zangwill. 2009-07-09. Step-edge instability during epitaxial growth of graphene from SiC(0001). https://doi.org/10.1103/physrevb.80.121406

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