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arXiv · 0907.3684

Memristive switching of MgO based magnetic tunnel junctions

P. Krzysteczko·G. Reiss·A. Thomas
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Abstract

Here we demonstrate that both, tunnel magneto resistance (TMR) and resistive switching (RS), can be observed simultaneously in nano-scale magnetic tunnel junctions. The devices show bipolar RS of 6 % and TMR ratios of about 100 %. For each magnetic state, multiple resistive sates are created depending on the bias history which provides a method for multi-bit data storage and logic. The electronic transport measurements are discussed in the framework of a memristive system. Differently prepared MgO barriers are compared to gain insight into the switching mechanism.

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P. Krzysteczko, G. Reiss, A. Thomas. 2009-07-21. Memristive switching of MgO based magnetic tunnel junctions. https://doi.org/10.1063/1.3224193

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