arXiv · 0909.3124
Spin relaxation of hot electrons in the Gamma-valley of zinc-blende semiconductors
Abstract
We present a technique to calculate the spin relaxation of hot electrons during their energy thermalization in the Gamma-valley of zinc-blende semiconductors. The results of this model match recent experimental data and they can be used to check the applicability of spin related boundary conditions across a semiconductor/ferromagnet junction in reverse bias conditions (spin injection).
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Yang Song, Hanan Dery. 2009-09-16. Spin relaxation of hot electrons in the Gamma-valley of zinc-blende semiconductors. https://arxiv.org/abs/0909.3124
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