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arXiv · 0909.3788

Epitaxial LaFeAsOF thin films grown by pulsed laser deposition

M. Kidszun·S. Haindl·E. Reich·J. Haenisch·L. Schultz·B. Holzapfel
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Abstract

Superconducting and epitaxially grown LaFeAsOF thin films were successfully prepared on (001)-oriented LaAlO3 substrates using pulsed laser deposition. The prepared thin films show exclusively a single in-plane orientation with epitaxial relation (001)[100] parallel to (001)[100] and a FWHM value of 1deg. Furthermore, resistive measurement of the superconducting transition temperature revealed a Tc90 of 25K with a high residual resistive ratio of 6.8. The applied preparation technique, standard thin film pulsed laser deposition at room temperature in combination with a subsequent post annealing process, is suitable for fabrication of high quality LaFeAsO1-xFx thin films. A high upper critical field of 76.2 T was evaluated for magnetic fields applied perpendicular to the c-axis and the anisotropy was calculated to be 3.3 assuming single band superconductivity.

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M. Kidszun, S. Haindl, E. Reich, J. Haenisch, L. Schultz, B. Holzapfel. 2009-09-21. Epitaxial LaFeAsOF thin films grown by pulsed laser deposition. https://doi.org/10.1088/0953-2048%2F23%2F2%2F022002

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