arXiv · 0910.2339
Metallic proximity effect in ballistic graphene with resonant scatterers
Abstract
We study the effect of resonant scatterers on the local density of states in a rectangular graphene setup with metallic leads. We find that the density of states in a vicinity of the Dirac point acquires a strong position dependence due to both metallic proximity effect and impurity scattering. This effect may prevent uniform gating of weakly-doped samples. We also demonstrate that even a single-atom impurity may essentially alter electronic states at low-doping on distances of the order of the sample size from the impurity.
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M. Titov, P. M. Ostrovsky, I. V. Gornyi. 2009-10-13. Metallic proximity effect in ballistic graphene with resonant scatterers. https://doi.org/10.1088/0268-1242%2F25%2F3%2F034007
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