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arXiv · 0910.3851

EDEPR of impurity centers embedded in silicon microcavities

N. T. Bagraev·W. Gehlhoff·D. S. Gets·L. E. Klyachkin·A. A. Kudryavtsev·A. M. Malyarenko·V. A. Mashkov·V. V. Romanov
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Abstract

We present the first findings of the new electrically-detected EPR (EDEPR) technique which reveal different shallow and deep centers without using the external cavity as well as the hf source and recorder, with measuring the only magnetoresistance of the Si-QW confined by the superconductor delta-barriers.

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N. T. Bagraev, W. Gehlhoff, D. S. Gets, L. E. Klyachkin, A. A. Kudryavtsev, A. M. Malyarenko, V. A. Mashkov, V. V. Romanov. 2009-10-20. EDEPR of impurity centers embedded in silicon microcavities. https://doi.org/10.1016/j.physb.2009.08.247

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