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arXiv · 0910.5100

Influence of disorder on incoherent transport near the Mott transition

Milos M. Radonjic·D. Tanaskovic·V. Dobrosavljevic·K. Haule
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Abstract

We calculate the optical and DC conductivity for half-filled disordered Hubbard model near the Mott metal-insulator transition. As in the clean case, large metallic resistivity is driven by a strong inelastic scattering, and Drude-like peak in the optical conductivity persists even at temperatures when the resistivity is well beyond the semiclassical Mott-Ioffe-Regel limit. Local random potential does not introduce new charge carriers, but it induces effective local carrier doping and broadens the bandwidth. This makes the system more metallic, in agreement with the recent experiments on X-ray irradiated charge-transfer salts.

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Milos M. Radonjic, D. Tanaskovic, V. Dobrosavljevic, K. Haule. 2010-03-01. Influence of disorder on incoherent transport near the Mott transition. https://doi.org/10.1103/physrevb.81.075118

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