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arXiv · 0910.5238

Fabrication and characterization of pseudo-spin-MOSFET

Y. Shuto·R. Nakane·H. Sukegawa·S. Yamamoto·M. Tanaka·K. Inomata·S. Sugahara
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Abstract

Recently spin-transistors receive considerable attention as a highly-functional building block of future integrated circuits. In order to realize spin-transistors, it is essential that technology of efficient spin injection/detection for semiconductor channel is established. However, this is not so easy challenge owing to ferromagnet/semiconductor-interface-related several problems. In this paper, we demonstrate pseudo-spin-MOSFET (PS-MOSFET) architecture that is a new circuit approach using an ordinary MOSFET and magnetic tunnel junction (MTJ) to reproduce the functions of spin transistors.

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Y. Shuto, R. Nakane, H. Sukegawa, S. Yamamoto, M. Tanaka, K. Inomata, S. Sugahara. 2009-10-28. Fabrication and characterization of pseudo-spin-MOSFET. https://arxiv.org/abs/0910.5238

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