Aging and memory in a two-dimensional electron system in Si

J. Jaroszynski; Dragana Popovic

doi:10.1016/j.physb.2008.11.041

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arXiv · 0911.1343

Aging and memory in a two-dimensional electron system in Si

J. Jaroszynski·Dragana Popovic

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Abstract

The relaxations of conductivity after a temporary change of carrier density n_s during the waiting time t_w have been studied in a strongly disordered two-dimensional electron system in Si. At low enough n_s < n_g (n_g - the glass transition density), the nonexponential relaxations exhibit aging and memory effects at low temperatures T. The aging properties change abruptly at the critical density for the metal-insulator transition n_c < n_g. The observed complex dynamics of the electronic transport is strikingly similar to that of other systems that are far from equilibrium.

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J. Jaroszynski, Dragana Popovic. 2009-11-06. Aging and memory in a two-dimensional electron system in Si. https://doi.org/10.1016/j.physb.2008.11.041

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