arXiv · 0912.0711
Evidence of fractional matching states in nanoperforated Nb thin film grown on porous silicon
Abstract
Resistive transitions have been measured on a perforated Nb thin film with a lattice of holes with the period of the order of ten nanometers. Bumps in the dR/dH versus H curves have been observed at the first matching field and its fractional values, 1/4, 1/9 and 1/16. This effect has been related to different vortex lattice configurations made available by the underlying lattice of holes.
Explore related subjects
Keep this discovery
M. Trezza, C. Cirillo, S. L. Prischepa, C. Attanasio. 2009-12-03. Evidence of fractional matching states in nanoperforated Nb thin film grown on porous silicon. https://doi.org/10.1209/0295-5075%2F88%2F57006
Cite the original work for its findings. Save a collection to share your selection of sources.