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arXiv · 0912.4341

A Single-Crystalline, Epitaxial SrTiO3 Thin-Film Transistor

Kosuke Uchida·Akira Yoshikawa·Kunihito Koumoto·Takeharu Kato·Yuichi Ikuhara·Hiromichi Ohta
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Abstract

We report herein fabrication and characterization of a thin-film transistor (TFT) using single-crystalline, epitaxial SrTiO3 film, which was grown by a pulsed laser deposition technique followed by the thermal annealing treatment in an oxygen atmosphere. Although TFTs on the polycrystalline epitaxial SrTiO3 films (as-deposited) exhibited poor transistor characteristics, the annealed single-crystalline SrTiO3 TFT exhibits transistor characteristics comparable with those of bulk single-crystal SrTiO3 FET: an on/off current ratio >10^5, sub-threshold swing ~2.1 V/decade, and field-effect mobility ~0.8 cm^2/Vs. This demonstrates the effectiveness of the appropriate thermal annealing treatment of epitaxial SrTiO3 films.

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Kosuke Uchida, Akira Yoshikawa, Kunihito Koumoto, Takeharu Kato, Yuichi Ikuhara, Hiromichi Ohta. 2009-12-22. A Single-Crystalline, Epitaxial SrTiO3 Thin-Film Transistor. https://doi.org/10.1063/1.3407568

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