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arXiv · 1001.0205

Dipole trap model for the metallic state in gated silicon-inversion layers

T. Hörmann·G. Brunthaler
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Abstract

In order to investigate the metallic state in high-mobility Si-MOS structures, we have further developed and precised the dipole trap model which was originally proposed by B.L. Altshuler and D.L. Maslov [Phys. Rev. Lett.\ 82, 145 (1999)]. Our additional numerical treatment enables us to drop several approximations and to introduce a limited spatial depth of the trap states inside the oxide as well as to include a distribution of trap energies. It turns out that a pronounced metallic state can be caused by such trap states at appropriate energies whose behavior is in good agreement with experimental observations.

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T. Hörmann, G. Brunthaler. 2010-01-01. Dipole trap model for the metallic state in gated silicon-inversion layers. https://doi.org/10.1103/physrevb.82.205310

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