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arXiv · 1001.5353

Angular-dependent oscillations of the magnetoresistance in Bi_2Se_3 due to the three-dimensional bulk Fermi surface

Kazuma Eto·Zhi Ren·A. A. Taskin·Kouji Segawa·Yoichi Ando
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Abstract

We observed pronounced angular-dependent magnetoresistance (MR) oscillations in a high-quality Bi2Se3 single crystal with the carrier density of 5x10^18 cm^-3, which is a topological insulator with residual bulk carriers. We show that the observed angular-dependent oscillations can be well simulated by using the parameters obtained from the Shubnikov-de Haas oscillations, which clarifies that the oscillations are solely due to the bulk Fermi surface. By completely elucidating the bulk oscillations, this result paves the way for distinguishing the two-dimensional surface state in angular-dependent MR studies in Bi2Se3 with much lower carrier density. Besides, the present result provides a compelling demonstration of how the Landau quantization of an anisotropic three-dimensional Fermi surface can give rise to pronounced angular-dependent MR oscillations.

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Kazuma Eto, Zhi Ren, A. A. Taskin, Kouji Segawa, Yoichi Ando. 2010-01-29. Angular-dependent oscillations of the magnetoresistance in Bi_2Se_3 due to the three-dimensional bulk Fermi surface. https://doi.org/10.1103/physrevb.81.195309

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