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arXiv · 1002.0435

Effective-mass model of surface scattering in locally oxidized Si nanowires

Panagiotis Drouvelis·Giorgos Fagas
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Abstract

We present a simple model to describe the lowest-subbands surface scattering in locally oxidized silicon nanowires grown in the [110] direction. To this end, we employ an atomistically scaled effective mass model projected from a three-dimensional effective mass equation and apply a quantum transport formalism to calculate the conductance for typical potential profiles. Comparison of our results with hole-transport calculations using atomistic models in conjunction with density functional theory (DFT) points to an intra-subband scattering mechanism from a potential well.

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Panagiotis Drouvelis, Giorgos Fagas. 2010-02-02. Effective-mass model of surface scattering in locally oxidized Si nanowires. https://doi.org/10.1109/ulis.2009.4897584

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