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arXiv · 1002.0706

Thermal shot noise in top-gated single carbon nanotube field effect transistors

J. Chaste·E. Pallecchi·P. Morfin·G. Feve·T. Kontos·J. -M. Berroir·P. Hakonen·B. Placais
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Abstract

The high-frequency transconductance and current noise of top-gated single carbon nanotube transistors have been measured and used to investigate hot electron effects in one-dimensional transistors. Results are in good agreement with a theory of 1-dimensional nano-transistor. In particular the prediction of a large transconductance correction to the Johnson-Nyquist thermal noise formula is confirmed experimentally. Experiment shows that nanotube transistors can be used as fast charge detectors for quantum coherent electronics with a resolution of $13\mathrm{μe/\sqrt{Hz}}$ in the 0.2-$0.8 \mathrm{GHz}$ band.

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J. Chaste, E. Pallecchi, P. Morfin, G. Feve, T. Kontos, J. -M. Berroir, P. Hakonen, B. Placais. 2010-05-12. Thermal shot noise in top-gated single carbon nanotube field effect transistors. https://doi.org/10.1063/1.3425889

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