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arXiv · 1002.1778

Electrically-induced n-i-p junctions in multiple graphene layer structures

M. Ryzhii·V. Ryzhii·T. Otsuji·V. Mitin·M. S. Shur
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Abstract

The Fermi energies of electrons and holes and their densities in different graphene layers (GLs) in the n- and p-regions of the electrically induced n-i-p junctions formed in multiple-GL structures are calculated both numerically and using a simplified analytical model. The reverse current associated with the injection of minority carriers through the n- and p-regions in the electrically-induced n-i-p junctions under the reverse bias is calculated as well. It is shown that in the electrically-induced n-i-p junctions with moderate numbers of GLs the reverse current can be substantially suppressed. Hence, multiple-GL structures with such n-i-p junctions can be used in different electron and optoelectron devices.

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M. Ryzhii, V. Ryzhii, T. Otsuji, V. Mitin, M. S. Shur. 2010-02-09. Electrically-induced n-i-p junctions in multiple graphene layer structures. https://doi.org/10.1103/physrevb.82.075419

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