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arXiv · 1002.2732

Supersymmetry Across Nanoscale Heterojunction

B. Bagchi·A. Ganguly·A. Sinha
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Abstract

We argue that supersymmetric transformation could be applied across the heterojunction formed by joining of two mixed semiconductors. A general framework is described by specifying the structure of ladder operators at the junction for making quantitative estimation of physical quantities. For a particular heterojunction device, we show that an exponential grading inside a nanoscale doped layer is amenable to exact analytical treatment for a class of potentials distorted by the junctions through the solutions of transformed Morse-Type potentials.

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B. Bagchi, A. Ganguly, A. Sinha. 2010-02-13. Supersymmetry Across Nanoscale Heterojunction. https://doi.org/10.1016/j.physleta.2010.04.001

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