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arXiv · 1003.1373

1/f Tunnel Current Noise through Si-bound Alkyl Monolayers

Nicolas Clément·Stéphane Pleutin·Oliver Seitz·Stéphane Lenfant·Dominique Vuillaume
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Abstract

We report low frequency tunnel current noise characteristics of an organic monolayer tunnel junction. The measured devices, n-Si/alkyl chain (C18H37)/Al junctions, exhibit a clear 1/ f^y power spectrum noise with 1< y <1.2. We observe a slight bias dependent background of the normalized current noise power spectrum (SI/I^2). However, a local increase is also observed over a certain bias range, mainly if V > 0.4 V, with an amplitude varying from device to device. We attribute this effect to an energy-dependent trap-induced tunnel current. We find that the background noise, SI, scales with (\partial I/\partial V)^2 . A model is proposed showing qualitative agreements with our experimental data.

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Nicolas Clément, Stéphane Pleutin, Oliver Seitz, Stéphane Lenfant, Dominique Vuillaume. 2010-03-06. 1/f Tunnel Current Noise through Si-bound Alkyl Monolayers. https://doi.org/10.1103/physrevb.76.205407

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