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arXiv · 1003.1755

A Novel Route for the Inclusion of Metal Dopants in Silicon

Jules A. Gardener·Irving Liaw·Gabriel Aeppli·Ian W. Boyd·Richard J. Chater·Tim S. Jones·David S. McPhail·Gopinathan Sankar·A. Marshall Stoneham·Marcin Sikora·Geoff Thornton·Sandrine Heutz
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Abstract

We report a new method to introduce metal atoms into silicon wafers, using negligible thermal budget. Molecular thin films are irradiated with ultra-violet (UV) light releasing metal species into the semiconductor substrate. Secondary ion mass spectrometry (SIMS) and X-ray absorption spectroscopy (XAS) show that Mn is incorporated into Si as an interstitial dopant. We propose that our method can form the basis of a generic low-cost, low-temperature technology that could lead to the creation of ordered dopant arrays.

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Jules A. Gardener, Irving Liaw, Gabriel Aeppli, Ian W. Boyd, Richard J. Chater, Tim S. Jones, David S. McPhail, Gopinathan Sankar, A. Marshall Stoneham, Marcin Sikora, Geoff Thornton, Sandrine Heutz. 2010-03-08. A Novel Route for the Inclusion of Metal Dopants in Silicon. https://doi.org/10.1088/0957-4484%2F21%2F2%2F025304

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