Microwave-assisted transport via localized states in degenerately doped Si single electron transistors

A. Rossi; D. G. Hasko

doi:10.1063/1.346796

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arXiv · 1003.2340

Microwave-assisted transport via localized states in degenerately doped Si single electron transistors

A. Rossi·D. G. Hasko

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Abstract

Resonant microwave-assisted and DC transport are investigated in degenerately doped silicon single electron transistors. A model based on hopping via localized impurity states is developed and first used to explain both the DC temperature dependence and the AC response. In particular, the non-monotonic power dependence of the resonant current under irradiation is proved to be consistent with spatial Rabi oscillations between these localized states.

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A. Rossi, D. G. Hasko. 2010-07-07. Microwave-assisted transport via localized states in degenerately doped Si single electron transistors. https://doi.org/10.1063/1.346796

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