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arXiv · 1003.3162

Macroscopic quantum state in a semiconductor device

Yun-Pil Shim·Anand Sharma·Chang-Yu Hsieh·Pawel Hawrylak
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Abstract

We show how nanostructuring of a metallic gate on a field-effect transistor (FET) can lead to a macroscopic, robust and voltage controlled quantum state in the electron channel of a FET. A chain of triple quantum dot molecules created by gate structure realizes a spin-half Heisenberg chain with spin-spin interactions alternating between ferromagnetic and anti-ferromagnetic. The quantum state is a semiconductor implementation of an integer spin-one antiferromagnetic Heisenberg chain with a unique correlated ground state and a finite energy gap, originally conjectured by Haldane.

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Yun-Pil Shim, Anand Sharma, Chang-Yu Hsieh, Pawel Hawrylak. 2010-03-16. Macroscopic quantum state in a semiconductor device. https://doi.org/10.1016/j.ssc.2010.08.002

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