Multi-Junction Switching in Bi$_2$Sr$_{1.6}$La$_{0.4}$CuO$_{6+δ}$ Intrinsic Josephson Junctions

Hiromi Kashiwaya; Tetsuro Matsumoto; Hajime Shibata; Hiroshi Eisaki; Yoshiyuki Yoshida; Hiroshi Kambara; Shiro Kawabata; Satoshi Kashiwaya

doi:10.1143/apex.3.043101

arXiv · 1004.1893

Multi-Junction Switching in Bi$_2$Sr$_{1.6}$La$_{0.4}$CuO$_{6+δ}$ Intrinsic Josephson Junctions

Hiromi Kashiwaya·Tetsuro Matsumoto·Hajime Shibata·Hiroshi Eisaki·Yoshiyuki Yoshida·Hiroshi Kambara·Shiro Kawabata·Satoshi Kashiwaya

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Abstract

We study the dynamics of multi-junction switching (MJS): several intrinsic Josephson junctions (IJJs) in an array switch to the finite voltage state simultaneously. The number of multi-switching junctions ($N$) was successfully tuned by changing the load resistance serially connected to an Bi$_2$Sr$_{1.6}$La$_{0.4}$CuO$_{6+δ}$ IJJ array. The independence of the escape rates of $N$ in the macroscopic quantum tunneling regime indicates that MJS is a $successive$ switching process rather than a $collective$ process. The origin of MJS is explained by the gradient of a load curve and the relative magnitudes of the switching currents of quasiparticle branches in the current-voltage plane.

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Hiromi Kashiwaya, Tetsuro Matsumoto, Hajime Shibata, Hiroshi Eisaki, Yoshiyuki Yoshida, Hiroshi Kambara, Shiro Kawabata, Satoshi Kashiwaya. 2010-04-12. Multi-Junction Switching in Bi$_2$Sr$_{1.6}$La$_{0.4}$CuO$_{6+δ}$ Intrinsic Josephson Junctions. https://doi.org/10.1143/apex.3.043101

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