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arXiv · 1004.2463

Carrier recombination dynamics in InGaN/GaN multiple quantum wells

Colin-N. Brosseau·Mathieu Perrin·Carlos Silva·Richard Leonelli
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Abstract

We have mesured the carrier recombination dynamics in InGaN/GaN multiple quantum wells over an unprecedented range in intensity. We find that at times shorter than 30\,ns, they follow an exponential form, and a power law at times longer than 1\,$μ$s. To explain these biphasic dynamics, we propose a simple three-level model where a charge-separated state interplays with the radiative state through charge transfer following a tunneling mechanism. We show how the distribution of distances in charge-separated states controls the dynamics at long time. Our results imply that charge recombination happens on nearly-isolated clusters of localization centers.

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Colin-N. Brosseau, Mathieu Perrin, Carlos Silva, Richard Leonelli. 2010-07-19. Carrier recombination dynamics in InGaN/GaN multiple quantum wells. https://doi.org/10.1103/physrevb.82.085305

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