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arXiv · 1004.3179

Giant inelastic tunneling in epitaxial graphene mediated by localized states

J. Cervenka·K. van de Ruit·C. F. J. Flipse
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Abstract

Local electronic structures of nanometer-sized patches of epitaxial graphene and its interface layer with SiC(0001) have been studied by atomically resolved scanning tunneling microscopy and spectroscopy. Localized states belonging to the interface layer of a graphene/SiC system show to have an essential influence on the electronic structure of graphene. Giant enhancement of inelastic tunneling, reaching 50% of the total tunneling current, has been observed at the localized states on a nanometer-sized graphene monolayer surrounded by defects.

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J. Cervenka, K. van de Ruit, C. F. J. Flipse. 2010-04-19. Giant inelastic tunneling in epitaxial graphene mediated by localized states. https://doi.org/10.1103/physrevb.81.205403

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