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arXiv · 1004.3201

Cu_{2}O as nonmagnetic semiconductor for spin transport in crystalline oxide electronics

I. Pallecchi·L. Pellegrino·N. Banerjee·M. Cantoni·A. Gadaleta·A. S. Siri·D. Marré
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Abstract

We probe spin transport in Cu_{2}O by measuring spin valve effect in La_{0.7}Sr_{0.3}MnO_{3}/Cu_{2}O/Co and La_{0.7}Sr_{0.3}MnO_{3}/Cu_{2}O/La_{0.7}Sr_{0.3}MnO_{3} epitaxial heterostructures. In La_{0.7}Sr_{0.3}MnO_{3}/Cu_{2}O/Co systems we find that a fraction of out-of-equilibrium spin polarized carrier actually travel across the Cu_{2}O layer up to distances of almost 100 nm at low temperature. The corresponding spin diffusion length dspin is estimated around 40 nm. Furthermore, we find that the insertion of a SrTiO_{3} tunneling barrier does not improve spin injection, likely due to the matching of resistances at the interfaces. Our result on dspin may be likely improved, both in terms of Cu_{2}O crystalline quality and sub-micrometric morphology and in terms of device geometry, indicating that Cu_{2}O is a potential material for efficient spin transport in devices based on crystalline oxides.

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I. Pallecchi, L. Pellegrino, N. Banerjee, M. Cantoni, A. Gadaleta, A. S. Siri, D. Marré. 2010-04-19. Cu_{2}O as nonmagnetic semiconductor for spin transport in crystalline oxide electronics. https://doi.org/10.1103/physrevb.81.165311

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