High-temperature spin polarization of high-mobility charge carriers in hybrid metal-semiconductor structures

E. Z. Meilikhov; R. M. Farzetdinova

doi:10.1063/1.3436559

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arXiv · 1004.4425

High-temperature spin polarization of high-mobility charge carriers in hybrid metal-semiconductor structures

E. Z. Meilikhov·R. M. Farzetdinova

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Abstract

We consider magnetic properties of the planar structure consisting of a ferromagnetic metal, diluted magnetic semiconductor and the quantum well (by the example of the hybrid heterostructure Fe--Ga(Mn)As--InGaAs). In the framework of the mean-field theory, there is the significant amplification of the ferromagnetism induced by the ferromagnetic metal (Fe) in the system of magnetic impurities (Mn) due to their indirect interaction via the conductivity channel in the quantum well. As a result, the high-temperature ferromagnetism arises leading to the spin polarization of charge carriers (holes) localized in the quantum well and preserving their high mobility.

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E. Z. Meilikhov, R. M. Farzetdinova. 2010-04-26. High-temperature spin polarization of high-mobility charge carriers in hybrid metal-semiconductor structures. https://doi.org/10.1063/1.3436559

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