Doping and temperature dependence of electronic Raman response in cuprate superconductors

Zhihao Geng; Shiping Feng

doi:10.1016/j.physleta.2010.10.062

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arXiv · 1004.4745

Doping and temperature dependence of electronic Raman response in cuprate superconductors

Zhihao Geng·Shiping Feng

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Abstract

The doping and temperature dependence of the electronic Raman response in cuprate superconductors is studied within the framework of the kinetic energy driven superconducting mechanism for the t-J model. It is shown that the temperature dependent depletion at low-energy shifts is faster in B_{1g} symmetry than in B_{2g} symmetry. In analogy to the domelike shape of the doping dependent superconducting transition temperature, the pair-breaking peak energy in B_{2g} channel increases with increasing doping in the underdoped regime, and reaches a maximum in the optimal doping, then decreases in the overdoped regime. Moreover, the overall Cooper pair density increases with increasing doping in the underdoped regime.

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Zhihao Geng, Shiping Feng. 2010-04-27. Doping and temperature dependence of electronic Raman response in cuprate superconductors. https://doi.org/10.1016/j.physleta.2010.10.062

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