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arXiv · 1004.5391

Electro-optic measurement of carrier mobility in an organic thin-film transistor

E. G. Bittle·J. W. Brill·J. E. Anthony
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Abstract

We have used an electro-optic technique to measure the position-dependent infrared absorption of holes injected into a thin crystal of the organic semiconductor, 6,13-bis(triisopropylsilylethynyl)-pentacene incorporated in a field-effect transistor. By applying square-wave voltages of variable frequency to the gate or drain, one can measure the time it takes for charges to accumulate on the surface, and therefore determine their mobility.

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E. G. Bittle, J. W. Brill, J. E. Anthony. 2010-06-15. Electro-optic measurement of carrier mobility in an organic thin-film transistor. https://doi.org/10.1063/1.3460526

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