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arXiv · 1005.1237

Heterointerface effects on the charging energy of shallow D- ground state in silicon: the role of dielectric mismatch

M. J. Calderon·J. Verduijn·G. P. Lansbergen·G. C. Tettamanzi·S. Rogge·Belita Koiller
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Abstract

Donor states in Si nanodevices can be strongly modified by nearby insulating barriers and metallic gates. We report here experimental results indicating a strong reduction in the charging energy of isolated As dopants in Si FinFETs relative to the bulk value. By studying the problem of two electrons bound to a shallow donor within the effective mass approach, we find that the measured small charging energy may be due to a combined effect of the insulator screening and the proximity of metallic gates.

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M. J. Calderon, J. Verduijn, G. P. Lansbergen, G. C. Tettamanzi, S. Rogge, Belita Koiller. 2010-05-07. Heterointerface effects on the charging energy of shallow D- ground state in silicon: the role of dielectric mismatch. https://doi.org/10.1103/physrevb.82.075317

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