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arXiv · 1005.3474

Electron properties of fluorinated single-layer graphene transistors

Freddie Withers·Marc Dubois·Alexander K. Savchenko
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Abstract

We have fabricated transistor structures using fluorinated single-layer graphene flakes and studied their electronic properties at different temperatures. Compared with pristine graphene, fluorinated graphene has very large and strongly temperature dependent resistance in the electro-neutrality region. We show that fluorination creates a mobility gap in graphene's spectrum where electron transport takes place via localised electron states.

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Freddie Withers, Marc Dubois, Alexander K. Savchenko. 2010-09-06. Electron properties of fluorinated single-layer graphene transistors. https://doi.org/10.1103/physrevb.82.073403

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