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arXiv · 1005.3726

Spin-Polarized Semiconductor Induced by Magnetic Impurities in Graphene

Maria Daghofer·Nan Zheng·Adriana Moreo
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Abstract

Magnetic impurities adsorbed on graphene are coupled magnetically via the itinerant electrons. This interaction opens a gap in the band structure of graphene. The result strongly depends on how the magnetic impurities are distributed. While random doping produces a semiconductor, if all or most impurities are located in the same sublattice, the spin degeneracy is removed and a spin-polarized semiconductor arises.

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Maria Daghofer, Nan Zheng, Adriana Moreo. 2010-10-04. Spin-Polarized Semiconductor Induced by Magnetic Impurities in Graphene. https://doi.org/10.1103/physrevb.82.121405

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