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arXiv · 1005.4157

Hot carriers in a bipolar graphene

Oleg G. Balev·Fedir T. Vasko
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Abstract

Hot carriers in a doped graphene under dc electric field is described taking into account the intraband energy relaxation due to acoustic phonon scattering and the interband generation-recombination transitions caused by thermal radiation. The consideration is performed for the case when the intercarrier scattering effectively establishes the quasiequilibrium electron-hole distributions, with effective temperature and concentrations of carriers. The concentration and energy balance equations are solved taking into account an interplay between weak energy relaxation and generation-recombination processes. The nonlinear conductivity is calculated for the momentum relaxation caused by the elastic scattering. The current-voltage characteristics, and the transition between bipolar and monopolar regimes of conductivity are obtained and analyzed, for different temperatures and gate voltages.

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Oleg G. Balev, Fedir T. Vasko. 2010-05-22. Hot carriers in a bipolar graphene. https://doi.org/10.1063/1.3431353

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