Disorder-induced magnetooscillations in bilayer graphene at high bias

V. V. Mkhitaryan; M. E. Raikh

doi:10.1103/physrevb.83.045406

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arXiv · 1005.5220

Disorder-induced magnetooscillations in bilayer graphene at high bias

V. V. Mkhitaryan·M. E. Raikh

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Abstract

Energy spectrum of biased bilayer graphene near the bottom has a "Mexican-hat"-like shape. For the Fermi level within the Mexican hat we predict that, apart from conventional magnetooscillations which vanish with temperature, there are additional magnetooscillations which are weakly sensitive to temperature. These oscillations are also insensitive to a long-range disorder. Their period in magnetic field scales with bias, V, as V^2. The origin of these oscillations is the disorder-induced scattering between electron-like and hole-like Fermi-surfaces, specific for Mexican hat.

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V. V. Mkhitaryan, M. E. Raikh. 2010-05-28. Disorder-induced magnetooscillations in bilayer graphene at high bias. https://doi.org/10.1103/physrevb.83.045406

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