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arXiv · 1006.1163

Electrical Measurement of the Direct Spin Hall Effect in Fe/In_xGa_{1-x}As Heterostructures

E. S. Garlid·Q. O. Hu·M. K. Chan·C. J. Palmstrom·P. A. Crowell
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Abstract

We report on an all-electrical measurement of the spin Hall effect in epitaxial Fe/In_{x}Ga_{1-x}As heterostructures with n-type channel doping (Si) and highly doped Schottky tunnel barriers. A transverse spin current generated by an ordinary charge current flowing in the In_{x}Ga_{1-x}As is detected by measuring the spin accumulation at the edges of the channel. The spin accumulation is identified through the observation of a Hanle effect in the Hall voltage measured by pairs of ferromagnetic contacts. We investigate the bias and temperature dependence of the resulting Hanle signal and determine the skew and side-jump contributions to the total spin Hall conductivity.

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E. S. Garlid, Q. O. Hu, M. K. Chan, C. J. Palmstrom, P. A. Crowell. 2010-06-07. Electrical Measurement of the Direct Spin Hall Effect in Fe/In_xGa_{1-x}As Heterostructures. https://doi.org/10.1103/physrevlett.105.156602

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