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arXiv · 1006.1564

Dramatic Mobility Enhancements in Doped SrTiO3 Thin Films by Defect Management

Y. Kozuka·Y. Hikita·C. Bell·H. Y. Hwang
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Abstract

We report bulk-quality n-type SrTiO3 (n-SrTiO3) thin films fabricated by pulsed laser deposition, with electron mobility as high as 6600 cm2 V-1 s-1 at 2 K and carrier density as low as 2.0 x 10^18cm-3 (~ 0.02 at. %), far exceeding previous pulsed laser deposition films. This result stems from precise strontium and oxygen vacancy defect chemistry management, providing a general approach for defect control in complex oxide heteroepitaxy.

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Y. Kozuka, Y. Hikita, C. Bell, H. Y. Hwang. 2010-06-08. Dramatic Mobility Enhancements in Doped SrTiO3 Thin Films by Defect Management. https://doi.org/10.1063/1.3457994

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