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arXiv · 1006.4060

Position controlled self-catalyzed growth of GaAs nanowires by molecular beam epitaxy

Benedikt Bauer·Andreas Rudolph·Marcello Soda·Anna Fontcuberta i Morral·Josef Zweck·Dieter Schuh·Elisabeth Reiger
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Abstract

GaAs nanowires are grown by molecular beam epitaxy using a self-catalyzed, Ga-assisted growth technique. Position control is achieved by nano-patterning a SiO2 layer with arrays of holes with a hole diameter of 85 nm and a hole pitch varying between 200 nm and 2 \mum. Gallium droplets form preferentially at the etched holes acting as catalyst for the nanowire growth. The nanowires have hexagonal cross-sections with {110} side facets and crystallize predominantly in zincblende. The interdistance dependence of the nanowire growth rate indicates a change of the III/V ratio towards As-rich conditions for large hole distances inhibiting NW growth.

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Benedikt Bauer, Andreas Rudolph, Marcello Soda, Anna Fontcuberta i Morral, Josef Zweck, Dieter Schuh, Elisabeth Reiger. 2010-08-20. Position controlled self-catalyzed growth of GaAs nanowires by molecular beam epitaxy. https://doi.org/10.1088/0957-4484%2F21%2F43%2F435601

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